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Band‐edge photoluminescence in CdTe
Author(s) -
Horodyský P.,
Grill R.,
Hlídek P.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642272
Subject(s) - photoluminescence , exciton , absorption edge , condensed matter physics , atmospheric temperature range , chemistry , band gap , absorption (acoustics) , cadmium telluride photovoltaics , resonance (particle physics) , crystal (programming language) , molecular physics , free electron model , atomic physics , electron , materials science , physics , optics , optoelectronics , quantum mechanics , meteorology , computer science , programming language
Near band‐gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4–500 K). It is demonstrated that the high‐temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free‐exciton resonance energy on the PL spectra is analytically studied by solving the diffusion‐recombination equation. We show that the reabsorption of the radiation by the free‐exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room‐temperature PL maximum matches neither the free‐exciton resonance nor the band‐gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)