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Control and measurement of electron spins in semiconductor quantum dots
Author(s) -
Kouwenhoven L. P.,
Elzerman J. M.,
Hanson R.,
Willems van Beveren L. H.,
Vandersypen L. M. K.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642228
Subject(s) - spins , dephasing , quantum dot , physics , condensed matter physics , spin (aerodynamics) , qubit , semiconductor , electron , quantum mechanics , quantum , thermodynamics
We present an overview of experimental steps taken towards using the spin of a single electron trapped in a semiconductor quantum dot as a spin qubit [Loss and DiVincenzo, Phys. Rev. A 57 , 120 (1998)]. Fabrication and characterization of a double quantum dot containing two coupled spins has been achieved, as well as initialization and single‐shot read‐out of the spin state. The relaxation time T 1 of single‐spin and two‐spin states was found to be on the order of a millisecond, dominated by spin–orbit interactions. The time‐averaged dephasing time T 2 *, due to fluctuations in the ensemble of nuclear spins in the host semiconductor, was determined to be on the order of several tens of nanosceconds. Coherent manipulation of single‐spin states can be performed using a microfabricated wire located close to the quantum dot, while two‐spin interactions rely on controlling the tunnel barrier connecting the respective quantum dots [Petta et al., Science 309 , 2180 (2005)]. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)