Indirect absorption edge of TlGaSe 2  crystals | Zendy

Grivickas Vytautas | Zendy; Bikbajevas Vitalijus | Zendy; Grivickas Paulius | Zendy

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Indirect absorption edge of TlGaSe 2 crystals

Author(s) -

Grivickas Vytautas,

Bikbajevas Vitalijus,

Grivickas Paulius

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200642069

Subject(s) - excited state , rydberg formula , absorption edge , exciton , absorption (acoustics) , scaling , absorption spectroscopy , range (aeronautics) , ground state , chemistry , atomic physics , spectral line , molecular physics , materials science , physics , condensed matter physics , optics , optoelectronics , band gap , quantum mechanics , mathematics , ion , geometry , organic chemistry , composite material , ionization

Absorption spectra of high‐quality layered TlGaSe 2 single crystals were measured in a wide temperature range. Results obtained at low temperatures show that the direct excitonic absorption initiating at E Gdir = 2.127 eV is perturbed by several series of step‐like features inherent for the indirect type transitions. Spectral modelling of these features revealed that: (i) the ground state of indirect exciton, n = 1, has a large Rydberg energy of about 100 meV, and (ii) the enhanced absorption to excited indirect excitonic states, n = 2, 3, exceeds the classical prediction for scaling factors K 1 ind / n 3 . (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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