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Localized excitons and defects in PbWO 4 single crystals: a luminescence and photo‐thermally stimulated disintegration study
Author(s) -
Krasnikov A.,
Nikl M.,
Zazubovich S.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642046
Subject(s) - exciton , luminescence , crystal (programming language) , photoluminescence , materials science , biexciton , irradiation , recombination , single crystal , molecular physics , atomic physics , doping , condensed matter physics , chemistry , optoelectronics , physics , crystallography , computer science , nuclear physics , programming language , biochemistry , gene
Luminescence from the exciton‐ and defect‐related states and photo‐thermally stimulated disintegration of these states under selective UV irradiation were studied in the PbWO 4 :Mo, Ce crystal and compared with the characteristics of other undoped and doped PbWO 4 crystals of different origin. For the first time, various localized exciton states were identified and their decay into stable defects was found. Different positions, halfwidths and temperature dependences were observed for the blue emission spectrum in different PbWO 4 crystals and explained by the presence of strongly overlapping emission bands of the WO 4 2– ‐type self‐trapped and localized excitons. Binding energies of the self‐trapped and localized exciton states were calculated. The dominant thermally stimulated luminescence peaks, created in the PbWO 4 :Mo, Ce crystal by the UV radiation, are located at 110, 202 and 247 K. The related trap depths were calculated using the initial rise method. It was concluded that under irradiation in the exciton absorption region, defects are mainly created due to the disintegration of the localized exciton states, which occurs without release of free charge carriers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)