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EPR of V Hal centres in SrS
Author(s) -
Seeman V.,
Danilkin M.,
Must M.,
Ots A.,
Pärnoja E.,
Pung L.,
Tarkpea K.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642033
Subject(s) - halogen , electron paramagnetic resonance , ion , vacancy defect , chemistry , doping , inorganic chemistry , analytical chemistry (journal) , crystallography , materials science , nuclear magnetic resonance , organic chemistry , optoelectronics , physics , alkyl
V Hal centres were studied by EPR in SrS doped with halogens after X‐raying the samples at 77 K. V Hal centre arises when a hole is captured by sulphide‐ion next to a cation vacancy with a halogen ion substituting the opposite sulphide‐ion. EPR parameters and thermal decay characteristics are measured for V Cl , V Br , and V I centres. The efficiency of different halogens to produce and stabilise cation vacancies is shown to vary for different alkaline earth sulphides. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)