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The antisite Lu Al defect‐related trap in Lu 3 Al 5 O 12 :Ce single crystal
Author(s) -
Nikl M.,
Mihokova E.,
Pejchal J.,
Vedda A.,
Zorenko Yu.,
Nejezchleb K.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200590023
Subject(s) - scintillator , scintillation , luminescence , thermoluminescence , materials science , octahedron , crystallographic defect , crystal structure , crystal (programming language) , single crystal , characterization (materials science) , crystallography , mineralogy , physics , chemistry , nanotechnology , optics , optoelectronics , programming language , detector , computer science
The cover picture of the current issue refers to the Rapid Research Letter by Martin Nikl et al. [1]. It depicts the structure of a Lu 3 Al 5 O 12 :Ce single crystal, a possible high performance scintillator material. Its scintillation performance is, however, degraded by the occurrence of antisite defects. Such defects arise in the material structure sketched in the figure due to the occurrence of Lu 3+ ions at the Al 3+ octahedral sites as seen in the middle left octahedron. This defect constitutes a shallow electron trap, which delays energy delivery to the Ce 3+ emission centers, and thus slows down the scintillation response of the material. Thermoluminescence measurements appear as sensitive diagnostic tool to evidence these defects in the single crystals grown. Martin Nikl is senior scientist and head of the Laboratory of Luminescence and Scintillation Materials at the Institute of Physics of the Czech Academy of Sciences. His main research activities include the characterization of the luminescence and scintillation properties of wide band‐gap materials and the influence of material defects on them.