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Optical, electrical and structural characterization of CuInSe 2 thin films
Author(s) -
Calderón C.,
Gordillo G.,
Romero E.,
Bolaños W.,
BartoloPérez P.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200590014
Subject(s) - crystallite , thin film , semiconductor , materials science , engineering physics , physics , nanotechnology , optoelectronics , metallurgy
The present issue of physica status solidi (b) comprises papers presented at the XVII Latin American Symposium on Solid State Physics (SLAFES 2004) in Havana, Cuba, 6–9 December 2004. Further papers from this conference are published in phys. stat. sol. (c) 2, No. 10 (2005). The cover picture refers to the article [1] on polycrystalline CuInSe 2 films by Clara Calderón et al. and shows the crystal structure of CuInSe 2 (right) and that of the In‐rich phase CuIn 3 Se 5 (left) which were used for the simulation and analysis of the X‐ray diffraction spectra. Clara Lilia Calderón Triana is teacher at the Solar Cells Laboratory of Universidad Nacional de Colombia in Bogotá where she has been working on solar cells and semiconductor materials since 1995. In particular, she is fabricating thin film solar cells based on CuInSe 2 and Cu(In,Ga)Se 2 . At SLAFES 2004, Clara Calderón received the physica status solidi Young Researcher Award for her second presentation entitled “Study of electrical transport properties of ZnO thin films used as front contact of solar cells” [2] which is published as Editor's Choice of this issue. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)