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Site selectivity of Fe 3+ Ga and the formation of Fe 3+ Ga –Ga i pairs in GaN
Author(s) -
Gehlhoff W.,
Azamat D.,
Hoffmann A.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565466
Subject(s) - electron paramagnetic resonance , wurtzite crystal structure , crystallography , stacking , chemistry , spectral line , resonance (particle physics) , hexagonal crystal system , hydride , symmetry (geometry) , materials science , nuclear magnetic resonance , atomic physics , physics , metal , geometry , mathematics , organic chemistry , astronomy
The electron paramagnetic resonance (EPR) spectra of Fe‐related defects in high quality thick freestanding hydride vapor phase (HVPE) grown GaN have been studied in the X‐ and Q‐band. The dominating part of the complex resonance pattern is due to isolated Fe 3+ (3d 5 , S = 5/2) on the two equivalent Ga sites A and B with C 3V point symmetry in the hexagonal GaN unit cell. These two physically equivalent sites, caused by the ABAB stacking sequence of the wurtzite structure, can be distinguished by EPR for electron spin systems S ≥ 2. We found a preferential incorporation of Fe in one of the two types of Ga sites. Moreover, despite the strong overlap with the intensive Fe 3+ transitions we could identify the main part of the additional observed very weak lines as ERROR pairs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)