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N‐polarity GaN on sapphire substrate grown by MOVPE
Author(s) -
Matsuoka Takashi,
Kobayashi Yasuyuki,
Takahata Hiroko,
Mitate Toshitugu,
Mizuno Seiichiro,
Sasaki Atsushi,
Yoshimoto Mamoru,
Ohnishi Tuyoshi,
Sumiya Masatomo
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565456
Subject(s) - metalorganic vapour phase epitaxy , sapphire , materials science , optoelectronics , substrate (aquarium) , layer (electronics) , polarity (international relations) , chemistry , epitaxy , optics , nanotechnology , laser , physics , geology , oceanography , cell , biochemistry
N‐polar GaN was grown on (0001) sapphire using two‐step growth technique by MOVPE. In the growth, the key points were the controlling of the density of nuclei in a buffer layer and promoting lateral growth at high temperature. The grown GaN films had mirror‐like smooth surfaces and were proved to have N‐polarity using convergent‐beam electron diffraction and coaxial impact‐collision ion spectroscopy. The FWHM of this GaN in the ω ‐scan was also much narrower than the previous reports. The density of threading dislocations was much less than for usual Ga‐polar GaN grown with a GaN or AlN buffer layer by MOVPE and MBE. In PL at room temperature, the strong edge emission was observed as Ga‐polarity. The p‐type conduction in Mg‐doped GaN was also realized by the same methods as for Ga‐polarity. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)