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Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al 2 O 3 substrates
Author(s) -
Danilchenko B. A.,
Zelensky S. E.,
Drok E.,
Vitusevich S. A.,
Danylyuk S. V.,
Klein N.,
Lüth H.,
Belyaev A. E.,
Kochelap V. A.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565445
Subject(s) - sapphire , heterojunction , materials science , dissipation , relaxation (psychology) , substrate (aquarium) , optoelectronics , atmospheric temperature range , phonon , activation energy , electron , condensed matter physics , wide bandgap semiconductor , chemistry , optics , thermodynamics , physics , psychology , social psychology , laser , oceanography , quantum mechanics , geology
The energy relaxation rate for hot electrons in AlGaN/GaN heterostructures was measured over the temperature range 4.2–300 K. Samples grown on sapphire and 4H‐SiC substrates were studied. The most important result is that the hot carrier energy dissipation differs for samples grown on sapphire and SiC substrates. In the case of sapphire substrate, the dissipation can be described by the emission of optical phonons with an energy of 90 meV and relaxation time of 25 fs. In the case of SiC substrate, both activation energy and relaxation time exceed the values characteristic of the electron‐LO‐phonon dissipation process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)