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Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction
Author(s) -
Barabash R. I.,
Ice G. E.,
Liu W.,
Roder C.,
Figge S.,
Einfeldt S.,
Hommel D.,
Katona T. M.,
Speck J. S.,
DenBaars S. P.,
Davis R. F.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565442
Subject(s) - misorientation , materials science , crystallography , tilt (camera) , epitaxy , diffraction , monochromatic color , substrate (aquarium) , optics , kikuchi line , layer (electronics) , geometry , microstructure , reflection high energy electron diffraction , chemistry , nanotechnology , composite material , geology , physics , mathematics , oceanography , grain boundary
The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free‐hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)