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N‐plasma assisted MBE grown GaN films on Si(111)
Author(s) -
Gangopadhyay Subhashis,
Schmidt Thomas,
Falta Jens
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565439
Subject(s) - x ray photoelectron spectroscopy , molecular beam epitaxy , scanning tunneling microscope , materials science , low energy electron diffraction , scanning electron microscope , thin film , diffraction , epitaxy , electron diffraction , layer (electronics) , crystallography , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , optics , chemical engineering , physics , chromatography , engineering , composite material
GaN films were grown by rf‐plasma assisted molecular beam epitaxy on nitrified Si(111) surfaces. Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and X‐ray photoelectron spectroscopy (XPS) have been used to characterize the structural and chemical properties of the GaN films. The XPS results show that GaN growth can be initiated only at temperatures below 650 °C. LEED indicates an improvement of the crystalline quality after introduction of a crystalline Si 3 N 4 interface layer. This is confirmed by STM, where an atomically resolved 3 × 3 reconstruction for thin GaN films is observed as well as a smooth growth morphology. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)