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Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a ‐plane GaN
Author(s) -
Darakchieva V.,
Paskova T.,
Paskov P. P.,
Arwin H.,
Schubert M.,
Monemar B.,
Figge S.,
Hommel D.,
Haskell B. A.,
Fini P. T.,
Nakamura S.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565400
Subject(s) - ellipsometry , phonon , infrared , materials science , strain (injury) , infrared spectroscopy , mode (computer interface) , optoelectronics , optics , condensed matter physics , chemistry , nanotechnology , physics , thin film , medicine , organic chemistry , computer science , operating system
Generalized infrared spectroscopic ellipsometry was applied to study the vibrational properties of anisotropically strained a ‐plane GaN films with different thicknesses. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and strain‐free frequency of the GaN A 1 (TO) mode. These results are compared with previous theoretical and experimental findings and discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)