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A ‐plane (11 $ \bar 2 $ 0) InN growth on nitridated R ‐plane (10 $ \bar 1 $ 2) sapphire by ECR‐MBE
Author(s) -
Kumagai Y.,
Tsuyuguchi A.,
Naoi H.,
Araki T.,
Na H.,
Nanishi Y.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565383
Subject(s) - sapphire , reflection high energy electron diffraction , electron cyclotron resonance , molecular beam epitaxy , electron diffraction , substrate (aquarium) , scanning electron microscope , materials science , diffraction , epitaxy , analytical chemistry (journal) , crystallography , chemistry , layer (electronics) , optics , nanotechnology , ion , physics , laser , composite material , oceanography , organic chemistry , chromatography , geology
A ‐plane (11 $ \bar 2 $ 0) InN has been successfully grown on R ‐plane (10 $ \bar 1 $ 2) sapphire substrate by electron cyclotron resonance (ECR) plasma‐exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R ‐plane sapphire by ECR nitrogen plasma was carried out at 430 °C for 10 and 15 min. The results of reflection high‐energy electron diffraction (RHEED), X‐ray diffraction (XRD), and scanning electron microscopy indicated the formation of A ‐plane InN on R ‐plane sapphire. Inclusion of cubic InN was also observed together with A ‐plane InN through RHEED and XRD measurements in case of A ‐plane InN layer grown on 10 min nitridated substrate. However, when the nitridation time of R ‐plane sapphire by ECR nitrogen plasma increased to 15 min, it is confirmed that formation of cubic InN was successfully suppressed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)