A ‐plane (11 $ \bar 2 $ 0) InN growth on nitridated  R ‐plane (10 $ \bar 1 $ 2) sapphire by ECR‐MBE | Zendy

Kumagai Y. | Zendy; Tsuyuguchi A. | Zendy; Naoi H. | Zendy; Araki T. | Zendy; Na H. | Zendy; Nanishi Y. | Zendy

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A ‐plane (11 $ \bar 2 $ 0) InN growth on nitridated R ‐plane (10 $ \bar 1 $ 2) sapphire by ECR‐MBE

Author(s) -

Kumagai Y.,

Tsuyuguchi A.,

Naoi H.,

Araki T.,

Na H.,

Nanishi Y.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200565383

Subject(s) - sapphire , reflection high energy electron diffraction , electron cyclotron resonance , molecular beam epitaxy , electron diffraction , substrate (aquarium) , scanning electron microscope , materials science , diffraction , epitaxy , analytical chemistry (journal) , crystallography , chemistry , layer (electronics) , optics , nanotechnology , ion , physics , laser , composite material , oceanography , organic chemistry , chromatography , geology

A ‐plane (11 $ \bar 2 $ 0) InN has been successfully grown on R ‐plane (10 $ \bar 1 $ 2) sapphire substrate by electron cyclotron resonance (ECR) plasma‐exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R ‐plane sapphire by ECR nitrogen plasma was carried out at 430 °C for 10 and 15 min. The results of reflection high‐energy electron diffraction (RHEED), X‐ray diffraction (XRD), and scanning electron microscopy indicated the formation of A ‐plane InN on R ‐plane sapphire. Inclusion of cubic InN was also observed together with A ‐plane InN through RHEED and XRD measurements in case of A ‐plane InN layer grown on 10 min nitridated substrate. However, when the nitridation time of R ‐plane sapphire by ECR nitrogen plasma increased to 15 min, it is confirmed that formation of cubic InN was successfully suppressed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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