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Electric fields in AlGaN/GaN quantum well structures
Author(s) -
McAleese C.,
Costa P. M. F. J.,
Graham D. M.,
Xiu H.,
Barnard J. S.,
Kappers M. J.,
Dawson P.,
Godfrey M. J.,
Humphreys C. J.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565382
Subject(s) - electric field , electron holography , quantum well , condensed matter physics , materials science , transmission electron microscopy , quantum , electron , holography , photoluminescence , optoelectronics , physics , optics , nanotechnology , quantum mechanics , laser
This paper presents a comparative study of the magnitude of the electric fields in AlGaN/GaN quantum well structures, measured using electron holography in a transmission electron microscope and estimated from a comparison of low temperature photoluminescence peak energies with calculated values. The values derived from the two techniques were found to be in reasonable agreement for the structures examined here. A larger field across the GaN well was observed from a single quantum well compared to a 10 period structure with equivalent well thickness, while the presence of an electric field across the barrier of the single quantum well was also detected by electron holography. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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