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Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructures
Author(s) -
Schmult S.,
Manfra M. J.,
Sergent A. M.,
Punnoose A.,
Chou H. T.,
GoldhaberGordon D.,
Molnar R. J.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565378
Subject(s) - heterojunction , condensed matter physics , electron mobility , scattering , materials science , wide bandgap semiconductor , molecular beam epitaxy , gallium nitride , optoelectronics , quantum well , conductivity , nanostructure , electron , nitride , epitaxy , nanotechnology , physics , optics , laser , layer (electronics) , quantum mechanics
High mobility two‐dimensional electron systems in GaN/AlGaN heterostructures have been realized by plasma assisted molecular beam epitaxy on GaN templates. In the density range of 10 11 cm –2 to 10 12 cm –2 , mobility values exceeding 160000 cm 2 /Vs have been achieved. Scattering mechanisms that presently limit the production of higher mobility samples are discussed. We present results of a systematic study of the weak localization and antilocalization corrections to the classical conductivity at very low magnetic fields. The unambiguous observation of a conductivity maximum at B = 0 suggests that spin–orbit scattering is not negligible in GaN heterostructures as one might expect for a wide‐bandgap system. We have recently realized electron transport through GaN nanostructures. We report on the transport properties of the first quantum point contacts (QPCs) in GaN. These devices are used to study one‐dimensional transport in the Nitride system. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)