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RF‐MBE growth and structural characterization of cubic InN films on GaAs
Author(s) -
Nakamura T.,
Iida K.,
Katayama R.,
Yamamoto T.,
Onabe K.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565376
Subject(s) - molecular beam epitaxy , materials science , diffraction , crystallography , transmission electron microscopy , reciprocal lattice , stoichiometry , flatness (cosmology) , electron diffraction , characterization (materials science) , epitaxy , analytical chemistry (journal) , chemistry , optics , nanotechnology , layer (electronics) , physics , organic chemistry , cosmology , quantum mechanics , chromatography
c‐InN (zincblende structure) films have been successfully grown on GaAs(001) substrates by rf‐plasma‐assisted molecular beam epitaxy. The X‐ray diffraction analysis has confirmed the growth of c‐InN films whose growth temperature was 400–550 °C. The structural properties (i.e. surface flatness and crystal quality) of the InN films are obviously improved for the growth condition of the near surface‐stoichiometry at the In‐rich side. By high resolution transmission electron microscopy images and 2 θ/ω X‐ray reciprocal space mapping measurements, hexagonal‐phase InN (h‐InN) is found to be generated from c‐InN{111} facets. The volume content of c‐InN is estimated to be ∼82% at maximum based on an analysis of the X‐ray diffraction intensity. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)