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Resonant Raman scattering in InGaN alloys
Author(s) -
Davydov V. Yu.,
Klochikhin A. A.,
Goncharuk I. N.,
Smirnov A. N.,
Sakharov A. V.,
Skvortsov A. P.,
Yagovkina M. A.,
Lebedev V. M.,
Lu Hai,
Schaff William J.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565350
Subject(s) - raman scattering , raman spectroscopy , bowing , photoluminescence , phonon , materials science , excitation , band gap , absorption (acoustics) , x ray raman scattering , wide bandgap semiconductor , condensed matter physics , scattering , alloy , molecular physics , optoelectronics , chemistry , optics , physics , metallurgy , philosophy , theology , quantum mechanics , composite material
A strong resonant behavior of the Raman scattering from LO‐phonons in n‐InGaN alloys at excitation near the interband absorption threshold was observed. An approach has been developed to describe the resonant Raman cross sectional profile in the presence of a Burstein‐Moss shift of the interband optical transitions. It has been shown that a simultaneous study of absorption, photoluminescence, and Raman spectra provides reliable information about the band gap and can be efficient for the alloy characteriza‐tion. Our data show that the band gap composition dependence of InGaN is characterized by the strongly nonlinear behavior with the large bowing parameter of 2.5–2.6 eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)