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Reflectance and photoluminescence studies of InGaN/GaN multiple‐quantum‐well structures embedded in an asymmetric microcavity
Author(s) -
Lin D. Y.,
Shiu J. J.,
Lin C. F.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565325
Subject(s) - photoluminescence , materials science , optoelectronics , distributed bragg reflector , luminescence , quantum well , spectral line , stacking , blueshift , optics , spontaneous emission , reflector (photography) , optical microcavity , reflectivity , chemistry , physics , laser , wavelength , light source , organic chemistry , astronomy
Abstract Using reflectance (R) and photoluminescence (PL) measurements InGaN/GaN multiple‐quantum‐well (MQW) structures embedded in an asymmetric microcavity with different thickness of stacking pairs have been studied. The asymmetric microcavity structures are composed of a cavity sandwitched between the air/semiconductor interface and a mirror using distributed Bragg reflector (DBR). For the DBR with thinner AlN layers the high‐reflectivity stop band locates at higher photon energy. The luminescence efficiency and the spectrum of InGaN/GaN multiple‐quantum‐well structures will be modified by the microcavity. A comparison of PL with R spectra shows that the emission efficiency can be enhanced by matching up the luminescence spectrum coming from the MQW and the high‐reflectivity stop band. From the blue shift of the cavity modes as a function of incident angles the refractive index and cavity length can be determined. By measuring the PL spectra as a function of emission angle, it is found that the PL spectra were predominatly determined by microcavity resonances. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)