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Four‐wave mixing measurements of biexcitons in uniaxially‐strained GaN films
Author(s) -
Adachi Satoru,
Toda Yasunori,
Ishiguro Tetsuro
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565298
Subject(s) - biexciton , exciton , strain (injury) , mixing (physics) , materials science , four wave mixing , excitation , molecular physics , condensed matter physics , optics , chemistry , nonlinear optics , physics , quantum mechanics , biology , laser , anatomy
Biexcitons of GaN under uniaxial strain have been investigated by spectrally‐resolved four‐wave mixing (FWM) technique. Two kinds of biexcitons were observed clearly and the binding energies were obtained. Since the uniaxial strain changes the exciton structure, the biexciton binding is modified and biexciton has also fine structure, which was revealed in the FWM spectra that were obtained by rotating the linearly polarized excitation against the direction of uniaxial strain. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)