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Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X‐ray microdiffraction
Author(s) -
Drakopoulos M.,
Laügt M.,
Riemann T.,
Beaumont B.,
Gibart P.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565294
Subject(s) - sapphire , coalescence (physics) , materials science , epitaxy , diffraction , tilt (camera) , synchrotron , crystallography , crystal (programming language) , optics , optoelectronics , chemistry , nanotechnology , physics , geometry , layer (electronics) , laser , computer science , mathematics , astrobiology , programming language
Epitaxial Lateral Overgrowth (ELO) has proven to be an efficient technology to significantly decrease the density of extended defects in the 10 7 cm –2 ranges. In the present work, called the two‐step‐ELO (2S‐ELO) process, only the coalescence boundaries are defective. In addition in this 2S‐ELO modification, the tilt angle between the two laterally overgrowing wings was found to be negligible. The thickness dependence of the crystal quality of an ELO GaN/sapphire was investigated using a 50 × 0.5 µm X‐ray focused beam of the ESRF synchrotron storage ring. Micro diffraction allows following the mechanism of reduction of the density of extended defects. It is evidenced that no tilt occurs during the 2S‐ELO process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)