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New semiconductor alloy GaNAsBi with temperature‐insensitive bandgap
Author(s) -
Yoshimoto Masahiro,
Huang Wei,
Feng Gan,
Oe Kunishige
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565270
Subject(s) - molecular beam epitaxy , photoluminescence , atmospheric temperature range , band gap , materials science , spectroscopy , alloy , analytical chemistry (journal) , semiconductor , rutherford backscattering spectrometry , epitaxy , thin film , chemistry , optoelectronics , nanotechnology , metallurgy , physics , layer (electronics) , quantum mechanics , chromatography , meteorology
GaN y As 1– x – y Bi x alloys were grown by molecular beam epitaxy (MBE). Successful incorporation of N and Bi atoms was confirmed and their concentration was evaluated by Rutherford backscattering spectroscopy (RBS) and secondary ion mass spectroscopy (SIMS). Single‐peak photoluminescence (PL) spectra were observed in the temperature range of 10–300 K. The PL peak energy of GaN y As 1– x – y Bi x alloy decreased with increasing GaBi and GaN molar fractions with redshift coefficients of ∼62 meV/%Bi and ∼130 meV/%N, respectively, at room temperature. The temperature dependence of the PL peak energy in the temperature range of 150–300 K is much smaller than the temperature dependence of the bandgap for InGaAsP. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)