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Growth of high‐In‐content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma‐assisted molecular‐beam epitaxy
Author(s) -
Kouno Tetsuya,
Kikuchi Akihiko,
Kishino Katsumi
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565254
Subject(s) - molecular beam epitaxy , photoluminescence , wavelength , diffraction , materials science , plasma , emission spectrum , analytical chemistry (journal) , epitaxy , spectral line , optoelectronics , chemistry , optics , layer (electronics) , nanotechnology , physics , quantum mechanics , astronomy , chromatography
Abstract Self‐organized In x Ga 1– x N nanocolumns with high‐In‐contents of x = 0.86–1.0 and In 0.86 Ga 0.14 N/ In 0.79 Ga 0.21 N multiple quantum disk (MQD) nanocolumns were successfully grown on Si(111) substrates by rf plasma‐assisted molecular beam epitaxy. The In x Ga 1– x N nanocolumns showed room‐temperature photoluminescence (RT‐PL) emission and the emission peak wavelength varied from 1500 to 1920 nm with increasing In content from 0.86 to 1.0. The In 0.86 Ga 0.14 N/In 0.79 Ga 0.21 N MQD nanocolumns showed a satellite peak in X‐ray diffraction spectra that indicates the growth of a good periodic structure. RT‐PL emission was also observed and the emission peak wavelength shifted from 1450 to 1620 nm with changing In 0.86 Ga 0.14 N well layer thickness from 1.5 to 3.0 nm. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)