Growth of high‐In‐content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma‐assisted molecular‐beam epitaxy

Self‐organized In x Ga 1– x N nanocolumns with high‐In‐contents of x = 0.86–1.0 and In 0.86 Ga 0.14 N/ In 0.79 Ga 0.21 N multiple quantum disk (MQD) nanocolumns were successfully grown on Si(111) substrates by rf plasma‐assisted molecular beam epitaxy. The In x Ga 1– x N nanocolumns showed room‐temperature photoluminescence (RT‐PL) emission and the emission peak wavelength varied from 1500 to 1920 nm with increasing In content from 0.86 to 1.0. The In 0.86 Ga 0.14 N/In 0.79 Ga 0.21 N MQD nanocolumns showed a satellite peak in X‐ray diffraction spectra that indicates the growth of a good periodic structure. RT‐PL emission was also observed and the emission peak wavelength shifted from 1450 to 1620 nm with changing In 0.86 Ga 0.14 N well layer thickness from 1.5 to 3.0 nm. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)