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In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dots
Author(s) -
Coraux J.,
Renevier H.,
Proietti M. G.,
FavreNicolin V.,
Daudin B.,
Renaud G.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565247
Subject(s) - diffraction , in situ , quantum dot , molecular beam epitaxy , materials science , nanostructure , scattering , layer (electronics) , optoelectronics , range (aeronautics) , condensed matter physics , nanotechnology , epitaxy , optics , physics , composite material , meteorology
We report on a general method that takes advantage of the full capability of anomalous diffraction and can be applied to the challenging case of small size embedded nanostructures. We study in situ and ex situ GaN Quantum Dots (QDs) grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE), and encapsulated by an AlN epilayer. We investigate the QD strain and composition that are related to size, morphology, and cap layer thickness by means of anomalous diffraction in grazing incidence. The X‐ray energy is tuned across the Ga K‐edge where the Ga atoms scattering power is strongly modified and diffraction becomes chemically selective, giving direct information on composition. Quantitative analysis of the oscillatory extended region above the edge gives information on composition and out‐of‐plane strain of the dots. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)