Transient pump–probe measurements for polarized excitons in strained GaN epitaxial layers | Zendy

Ishiguro T. | Zendy; Toda Y. | Zendy; Adachi S. | Zendy; Arita M. | Zendy; Arakawa Y. | Zendy

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Transient pump–probe measurements for polarized excitons in strained GaN epitaxial layers

Author(s) -

Ishiguro T.,

Toda Y.,

Adachi S.,

Arita M.,

Arakawa Y.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200565234

Subject(s) - exciton , sapphire , epitaxy , relaxation (psychology) , materials science , transient (computer programming) , condensed matter physics , polarization (electrochemistry) , optoelectronics , molecular physics , layer (electronics) , optics , chemistry , physics , nanotechnology , psychology , social psychology , laser , computer science , operating system

We have studied exciton spin relaxation in strained GaN epilayers on various sapphire substrates using spindependent transient reflectivity and three‐pulse four‐wave mixing measurements. Strikingly fast exciton spin relaxation (<1 ps) at 10 K was observed in the lowest exciton level ( A ‐exciton) both in bulk and GaN layer on c ‐sapphire. In contrast, the transient signals in the GaN layer on a ‐sapphire show the break down of the spin polarization caused by the exchange interaction. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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