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Transient pump–probe measurements for polarized excitons in strained GaN epitaxial layers
Author(s) -
Ishiguro T.,
Toda Y.,
Adachi S.,
Arita M.,
Arakawa Y.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565234
Subject(s) - exciton , sapphire , epitaxy , relaxation (psychology) , materials science , transient (computer programming) , condensed matter physics , polarization (electrochemistry) , optoelectronics , molecular physics , layer (electronics) , optics , chemistry , physics , nanotechnology , psychology , social psychology , laser , computer science , operating system
We have studied exciton spin relaxation in strained GaN epilayers on various sapphire substrates using spindependent transient reflectivity and three‐pulse four‐wave mixing measurements. Strikingly fast exciton spin relaxation (<1 ps) at 10 K was observed in the lowest exciton level ( A ‐exciton) both in bulk and GaN layer on c ‐sapphire. In contrast, the transient signals in the GaN layer on a ‐sapphire show the break down of the spin polarization caused by the exchange interaction. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)