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Low density GaN quantum dots on AlGaN
Author(s) -
Pakuła K.,
Bożek R.,
Surowiecka K.,
Stępniewski R.,
Wysmolek A.,
Baranowski J. M.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565231
Subject(s) - quantum dot , crystallite , metalorganic vapour phase epitaxy , materials science , photoluminescence , etching (microfabrication) , optoelectronics , atomic force microscopy , silane , nanotechnology , layer (electronics) , composite material , epitaxy , metallurgy
A new method of the growth of low‐density GaN quantum dots on AlGaN by MOVPE is reported. The method bases on in‐situ etching of the AlGaN surface in the presence of silane (SiH 4 ) and subsequent growth of randomly nucleated GaN nano‐crystallites. Investigation of successive growth stages with atomic force microscopy (AFM) shows that density of the GaN crystallites is of the order of 10 8 cm –2 . Micro‐photoluminescence (µPL) measurements show sharp emission lines originating from single quantum dots without any artificial masks or mesa structures. This gave unique possibility for advanced studies on optical and electrical properties of single GaN quantum dots in AlGaN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)