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Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates
Author(s) -
Žukauskas A.,
Kazlauskas K.,
Tamulaitis G.,
Pobedinskas P.,
Juršėnas S.,
Miasojedovas S.,
Ivanov V. Yu.,
Godlewski M.,
Skierbiszewski C.,
Siekacz M.,
Franssen G.,
Perlin P.,
Suski T.,
Grzegory I.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565228
Subject(s) - molecular beam epitaxy , quantum well , luminescence , exciton , photoexcitation , materials science , optoelectronics , photoluminescence , cathodoluminescence , wide bandgap semiconductor , excited state , epitaxy , condensed matter physics , laser , atomic physics , optics , nanotechnology , physics , layer (electronics)
Role of band potential roughness on luminescence decay time and stimulated emission in InGaN quantum wells (QWs) grown by rf plasma‐assisted molecular beam epitaxy (MBE) on bulk GaN substrates was studied. A high‐photoexcitation regime used ensured conditions similar to those in operating laser diodes. Standard deviation of the potential fluctuations in different thickness InGaN QWs was found to vary in the range of 13–22 meV as revealed by Monte Carlo simulation of localized exciton hopping. A negligible influence of this variation on the luminescence decay time (∼700 ps) and stimulated emission threshold (∼30 kW/cm 2 ) was observed. We attribute this insensitivity to the low density of localized states (∼1 × 10 18 cm –3 ) estimated in our high‐quality QWs grown by MBE, and therefore, assign extended states to be mainly responsible for the properties of highly‐excited luminescence. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)