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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl 3 and NH 3
Author(s) -
Kumagai Y.,
Takemoto K.,
Kikuchi J.,
Hasegawa T.,
Murakami H.,
Koukitu A.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565208
Subject(s) - hydride , partial pressure , epitaxy , atmospheric temperature range , vapor phase , gas phase , chemistry , phase (matter) , analytical chemistry (journal) , thermodynamics , materials science , hydrogen , organic chemistry , physics , layer (electronics) , oxygen
Abstract A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl 3 and NH 3 was performed. Regardless of the carrier gas used, partial pressures of Al‐containing gaseous species [AlCl 3 , AlCl 2 , AlCl and (AlCl 3 ) 2 ] in equilibrium with AlN are significantly low in the temperature range of 500–1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (Δ P Al ) becomes almost equal to the input partial pressure of AlCl 3 , which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)