Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl 3  and NH 3 | Zendy

Kumagai Y. | Zendy; Takemoto K. | Zendy; Kikuchi J. | Zendy; Hasegawa T. | Zendy; Murakami H. | Zendy; Koukitu A. | Zendy

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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl 3 and NH 3

Author(s) -

Kumagai Y.,

Takemoto K.,

Kikuchi J.,

Hasegawa T.,

Murakami H.,

Koukitu A.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200565208

Subject(s) - hydride , partial pressure , epitaxy , atmospheric temperature range , vapor phase , gas phase , chemistry , phase (matter) , analytical chemistry (journal) , thermodynamics , materials science , hydrogen , organic chemistry , physics , layer (electronics) , oxygen

A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl 3 and NH 3 was performed. Regardless of the carrier gas used, partial pressures of Al‐containing gaseous species [AlCl 3 , AlCl 2 , AlCl and (AlCl 3 ) 2 ] in equilibrium with AlN are significantly low in the temperature range of 500–1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (Δ P Al ) becomes almost equal to the input partial pressure of AlCl 3 , which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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