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Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells
Author(s) -
Lazić S.,
Calleja J. M.,
Hey R.,
Ploog K.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565192
Subject(s) - molecular beam epitaxy , quantum well , raman spectroscopy , raman scattering , resonance (particle physics) , chemistry , range (aeronautics) , band gap , materials science , analytical chemistry (journal) , epitaxy , optoelectronics , atomic physics , optics , laser , layer (electronics) , physics , composite material , organic chemistry , chromatography
We report resonant Raman scattering measurements on InGaAsN/AlGaAs multiquantum wells grown by plasma‐assisted molecular beam epitaxy. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm –1 . They are resonant in the energy range 1.81–1.87 eV at decreasing energies for increasing N concentration. The resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. The peaks are interpreted in terms of local vibrations involving GaN and AlN units and pairs. They seem to form mostly at the quantum well interfaces due to preferential N bonding to Al. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)