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Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy
Author(s) -
Ueta A.,
Akahane K.,
Gozu S.,
Yamamoto N.,
Ohtani N.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565172
Subject(s) - molecular beam epitaxy , quantum dot , materials science , wavelength , plasma , maxima , optoelectronics , chemistry , nanotechnology , epitaxy , physics , layer (electronics) , quantum mechanics , art , performance art , art history
InAsN QDs on (001) GaAs substrates were studied. Each InAsN QD was surrounded by four {011} facets and had a pyramidal shape. However, InAs QDs had a half sphere shape. The InAsN QDs had size distributions with two maxima. This might be explained by the existence of very stable {011} facets and curved surfaces between the {011} facets. The curved surfaces act as the incorporation sites to grow the QD larger. This means that large InAsN QDs will be suppress the further growth, because of the smaller occupations of the curved surfaces to the total surface area of the InAsN QD. Excess In atoms supplied on the {001} plane will accumulate strains and form new small QDs by the Stranski–Krastanow (S–K) growth mode. This turns out two maxima of the size distribution. These results will open the possibility of obtaining the size control and small distributions of the InAsN QDs. We investigated the emission properties of these InAsN QDs. An emission peak of nearly 1300 nm from the InAsN QDs with a plasma power of 350 W was observed. InAsN QDs are an attractive material for achieving emissions in the fiber‐optic communication wavelengths. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)