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Temperature‐dependent growth and characterization of N‐polar InN films by molecular beam epitaxy
Author(s) -
Wang Xinqiang,
Che SongBek,
Ishitani Yoshihiro,
Yoshikawa Akihiko
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565145
Subject(s) - molecular beam epitaxy , photoluminescence , polar , characterization (materials science) , materials science , epitaxy , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , layer (electronics) , organic chemistry , physics , astronomy
N‐polar InN films were grown as a function of temperature (∼440–620 °C) on 500 nm thick GaN template by plasma‐assisted molecular beam epitaxy. InN films grown at different temperatures showed different morphologies that could be roughly divided into two regions. Dendritic morphologies could be observed at temperatures lower than 540 °C while step‐flow‐like morphology could be obtained at temperatures higher than 540 °C. Crystalline quality became better with the increase of growth temperature at temperatures lower than 540 °C and almost saturated at higher temperatures. Strong photoluminescence was observed at room temperature and 13 K with the emission peaks at 0.67 and 0.7 eV, respectively. Based on our results, the growth temperature above 540 °C was recommended for N‐polar InN epitaxy. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)