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Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells
Author(s) -
Tchernycheva M.,
Nevou L.,
Doyennette L.,
Julien F. H.,
Guillot F.,
Monroy E.,
Remmele T.,
Albrecht M.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565116
Subject(s) - quantum well , delocalized electron , monolayer , excited state , ground state , electron , condensed matter physics , coupling (piping) , materials science , chemistry , atomic physics , molecular physics , physics , nanotechnology , optics , laser , organic chemistry , quantum mechanics , metallurgy
The electronic confinement in GaN quantum wells coupled by an ultra‐thin AlN barrier is investigated both experimentally and theoretically. The strong coupling between the wells is evidenced by the observation of two pronounced intersubband absorptions peaked at around 0.6 and 0.95 eV for 2 monolayer thick AlN coupling barrier. In agreement with calculations, these absorptions are attributed respectively to the transitions between the ground states of the two coupled wells and between the ground state and the excited state delocalized between the two wells. The experimental results provide clear evidence that the potential drop at the GaN/AlN interfaces is not abrupt, but spread over 1 monolayer. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)