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Dissociation of V Ga –O N complexes in HVPE GaN by high pressure and high temperature annealing
Author(s) -
Tuomisto F.,
Hautakangas S.,
Makkonen I.,
Ranki V.,
Puska M. J.,
Saarinen K.,
Bockowski M.,
Suski T.,
Paskova T.,
Monemar B.,
Xu X.,
Look D. C.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565109
Subject(s) - vacancy defect , annealing (glass) , doppler broadening , hydride , materials science , epitaxy , dissociation (chemistry) , doping , ab initio , crystallography , electron beam processing , impurity , analytical chemistry (journal) , irradiation , chemistry , spectral line , metal , nanotechnology , optoelectronics , physics , metallurgy , nuclear physics , layer (electronics) , chromatography , astronomy , organic chemistry
We have used positron annihilation spectroscopy to study the high‐pressure annealing induced thermal recovery of vacancy defects in free‐standing GaN grown by hydride vapor phase epitaxy (HVPE). The results show that the in‐grown Ga vacancy complexes recover after annealing at 1500–1700 K. Comparison of the experimental positron data with ab‐initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V Ga in electron irradiated GaN and the V Ga –O N complexes in highly O‐doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V Ga –O N pairs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)