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Spatially resolved cathodoluminescence, photoluminescence, electroluminescence, and reflectance study of GaInN quantum wells on non‐(0001) GaN facets
Author(s) -
Feneberg M.,
Schirra M.,
Neubert B.,
Brückner P.,
Scholz F.,
Sauer R.,
Thonke K.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200565101
Subject(s) - cathodoluminescence , electroluminescence , materials science , quantum well , optoelectronics , facet (psychology) , luminescence , photoluminescence , light emitting diode , bar (unit) , diode , optics , nanotechnology , laser , geology , physics , psychology , social psychology , personality , layer (electronics) , big five personality traits , oceanography
GaInN light emitting diodes have been grown on the {1 $ \bar 1 $ 01} and the {11 $ \bar 2 $ 2} facet of selectively overgrown GaN. Different luminescence measurements with high spectral and spatial resolution have been performed which show strong indications that the piezoelectric fields in the processed devices are diminished increasing the overall efficiency and reducing the carrier lifetime. Furthermore, the growth conditions on such facets different from {0001} result in altered In incorporation as analyzed by spatially resolved cathodoluminescence. The spectral features found by different measurement techniques are correlated and yield important information on the material quality. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)