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Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion
Author(s) -
Tanaka Tooru,
Hayashida Kazuki,
Saito Katsuhiko,
Nishio Mitsuhiro,
Guo Qixin,
Ogawa Hiroshi
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564729
Subject(s) - materials science , layer (electronics) , diffusion , fabrication , oxide , thermal oxidation , diode , surface layer , thermal , optoelectronics , chemical engineering , wet cleaning , nanotechnology , chemistry , metallurgy , medicine , physics , alternative medicine , organic chemistry , pathology , meteorology , engineering , thermodynamics
Three kinds of surface treatments of ZnTe have been investigated for the fabrication of the light emitting diode (LED) by Al thermal diffusion. In case that a wet cleaning process was used, a poly‐crystalline layer remains on the surface of ZnTe whereas a clean surface was obtained by using in situ thermal or H radical cleaning processes. However, a series resistance of the LED fabricated on a clean surface is much higher than those fabricated using the wet cleaning process, indicating that a clean interface leads to a formation of a heavily Al doped layer with high compensation by the Al diffusion. Based on these results, we have attempted to control an interface by inserting an oxide layer intentionally on a clean surface of ZnTe. As a consequence, we have found that an Al concentration in the diffused layer can be controlled by changing the thickness of the oxidation layer, resulting in obtaining a LED with better performance. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)