Premium
Zn x Cd 1– x Se/Zn x ′ Cd y ′ Mg 1– x ′– y ′ Se multi‐quantum well structures for intersubband devices grown by MBE
Author(s) -
Lu H.,
Shen A.,
Muñoz M.,
PerezPaz M. N.,
Sohel M.,
Zhang S. K.,
Alfano R. R.,
Tamargo M. C.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564722
Subject(s) - photoluminescence , quantum well infrared photodetector , quantum well , photodetector , optoelectronics , infrared , molecular beam epitaxy , materials science , band gap , doping , quantum efficiency , condensed matter physics , diffraction , chemistry , optics , physics , epitaxy , nanotechnology , laser , layer (electronics)
Quantum well infrared photodetectors (QWIPs) from wide bandgap II–VI compounds are promising as high quantum efficiency detectors in the mid‐IR. A series of Cl‐doped Zn x Cd (1– x ) Se/Zn x ′ Cd y ′ Mg (1– x ′– y ′) Se multiple‐quantum‐wells (MQW) with different quantum well (QW) thicknesses have been grown by MBE lattice‐matched to InP substrates. The high material quality of the samples was demonstrated by X‐ray diffraction (XRD), steady‐state photoluminescence (PL), and time‐resolved photoluminescence ( t ‐PL) measurements. Contactless electroreflectance (CER) measurements were performed to investigate high order transitions within the QWs. From these transitions, intersubband transition energies were predicted and compared with the theoretical calculations, a very useful result for device design. Our results indicate that this material system is very promising for intersubband device applications such as QWIPs operating in the 3–5 µm region. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)