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Yellow–green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates
Author(s) -
Nomura Ichirou,
Manoshiro Asuka,
Kikuchi Akihiko,
Kishino Katsumi
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564721
Subject(s) - lasing threshold , diode , materials science , laser , optoelectronics , green laser , gain switching , molecular beam epitaxy , current density , semiconductor laser theory , optics , epitaxy , layer (electronics) , nanotechnology , physics , wavelength , quantum mechanics
ZnCdTe/MgZnSeTe laser diodes (LDs) were fabricated on ZnTe substrates by molecular beam epitaxy. The LDs were characterized under single short pulse current injections at low temperature. Yellow–green single‐mode lasing emissions at 564 nm were successfully obtained, for the first time. The threshold current density ( J th ) at 100 K was 2.8 kA/cm 2 . The full width at half maximum value of the lasing emission peak was 1.1 meV (0.29 nm). From the temperature dependency of the J th , it was confirmed that the lasing operations were obtained up to 170 K. The characteristic temperature value was estimated to be 228 K. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)