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Highly sensitive ultraviolet PIN photodiodes of ZnSSe n + –i–p structure/p + ‐GaAs substrate grown by MBE
Author(s) -
Miki K.,
Abe T.,
Naruse J.,
Ikumi K.,
Yamaguchi T.,
Kasada H.,
Ando K.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564720
Subject(s) - photodiode , molecular beam epitaxy , ultraviolet , quantum efficiency , dark current , optoelectronics , ohmic contact , wavelength , materials science , analytical chemistry (journal) , chemistry , photodetector , epitaxy , nanotechnology , chromatography , layer (electronics)
Highly sensitive and stable ultraviolet PIN photodiodes of ZnSSe junction structure on p + ‐GaAs substrates are developed by molecular beam epitaxy (MBE) growth. The short‐wavelength photodiodes are grown on p‐type (100)GaAs by MBE utilizing an optimized “hetero‐interface super‐lattice (SLE) buffer” consisting of a ZnTe–ZnSe multiple quantum well, by which a large energy barrier (>1 eV) for hole ohmic conduction is overcome. ZnSSe n + –i–p photodiodes with a thin interface SLE are grown in a complete lattice‐matched condition (S = 6%). High sensitivities of 0.30 A/W (external quantum efficiency: η = 83.6%) in the blue (450 nm), 0.24 A/W ( η = 75.8%) in the blue–violet (400 nm: for BlueRay and HD‐DVD systems) and 0.12 A/W ( η = 50.9%) in the ultraviolet (300 nm) regions are obtained with an extremely low dark leakage current (∼sub pA/mm 2 ) under high reverse bias (20 V) at 300 K. Because of the low dark current, a very low noise equivalent power value below 10 –14 W $ \sqrt {{\rm Hz/cm}^{-2}} $ (450 nm) is proved in the blue–violet region. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)