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Cyclotron resonance in II–VI semiconductors at THz region
Author(s) -
Imanaka Y.,
Takamasu T.,
Takehana K.,
Oshikiri M.,
Kido G.,
Nojiri H.,
Matsuda Y. H.,
Arimoto H.,
Takeyama S.,
Miura N.,
Karczewski G.,
Wojtowicz T.,
Kossut J.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564719
Subject(s) - cyclotron resonance , cyclotron , cadmium telluride photovoltaics , semiconductor , terahertz radiation , impurity , resonance (particle physics) , fourier transform ion cyclotron resonance , ion cyclotron resonance , magnetic field , materials science , atomic physics , chemistry , physics , nuclear magnetic resonance , condensed matter physics , mass spectrometry , optoelectronics , organic chemistry , quantum mechanics , chromatography
Cyclotron resonance experiments for various II–VI semiconductors (n‐ZnO, n‐ZnS, n‐ZnSe, n‐CdS, n‐CdSe, n‐CdTe) have been performed at ultra‐high magnetic fields beyond 100 T. Cyclotron resonance and impurity related resonance are observed definitely with the use of THz radiation sources, and the magnetic field dependence of effective mass is obtained at a wide range of a THz region in n‐type CdTe. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)