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Control of ZnO (000 $ \bar 1$ )/Al 2 O 3 (11 $ \bar 2$ 0) surface morphologies using plasma‐assisted molecular beam epitaxy
Author(s) -
Xu Huaizhe,
Ohtani Keita,
Yamao Miyuki,
Ohno Hideo
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564657
Subject(s) - reflection high energy electron diffraction , molecular beam epitaxy , electron diffraction , substrate (aquarium) , sapphire , monolayer , nanotechnology , materials science , analytical chemistry (journal) , chemistry , diffraction , crystallography , epitaxy , layer (electronics) , optics , laser , physics , oceanography , chromatography , geology
The surface morphologies of ZnO thin films grown on Al 2 O 3 (11 $ \bar 2 $ 0) (a‐plane sapphire) substrate by plasma‐assisted molecular beam epitaxy (PAMBE) were systematically investigated by in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM) as a function of Zn beam flux intensity and substrate temperature. The ZnO films are uniquely (000 $ \bar 1 $ ) oriented with no trace of secondary orientation. A phase diagram for ZnO growth was established, which described the ZnO growth mode transition at fixed O 2 flow rate of 0.3 sccm. For the growth at 750 °C with Zn beam flux of 3.6 × 10 –7 Torr, the RHEED showed a (3 × 3) pattern and a smooth surface represented by atomically flat terraces and half unit cell high steps (∼0.26 nm, a charge neutral unit of ZnO) was observed corresponding to a monolayer or bilayer thickness of Zn–O along the c ‐axis of (000 $ \bar 1 $ ) ZnO. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)