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CBE growth of high‐quality ZnO epitaxial layers
Author(s) -
ElShaer A.,
Bakin A.,
Mofor A. C.,
Bläsing J.,
Krost A.,
Stoimenos J.,
Pécz B.,
Kreye M.,
Heuken M.,
Waag A.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564655
Subject(s) - materials science , sapphire , epitaxy , wafer , optoelectronics , high resolution transmission electron microscopy , full width at half maximum , surface roughness , zinc , surface finish , homogeneity (statistics) , nanotechnology , optics , composite material , transmission electron microscopy , metallurgy , layer (electronics) , laser , statistics , physics , mathematics
Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c‐sapphire using a MgO buffer. PL‐mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO‐on‐sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO‐on‐sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)