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Phonon properties and doping of Zn 1– x Mn x Se epilayers grown by molecular‐beam epitaxy
Author(s) -
Agarwal K. C.,
Daniel B.,
Hofmann T.,
Schubert M.,
Klingshirn C.,
Hetterich M.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200564622
Subject(s) - molecular beam epitaxy , doping , phonon , materials science , epitaxy , optoelectronics , condensed matter physics , chemistry , nanotechnology , physics , layer (electronics)
We present far‐infrared (FIR) reflection studies for Zn 1– x Mn x Se. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate‐mode behavior for the optical phonon modes in Zn 1– x Mn x Se. In addition to the known ZnSe‐like and MnSe‐like phonon resonances a weak defect‐related feature ‘D’ is found below the MnSe‐like phonon band. The frequency of this feature shows a temperature and Mn dependent red‐shift. Furthermore, the observation of a drastic reduction in the free‐electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn‐related defect complexes. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)