Phonon properties and doping of Zn 1– x   Mn  x   Se epilayers grown by molecular‐beam epitaxy | Zendy

Agarwal K. C. | Zendy; Daniel B. | Zendy; Hofmann T. | Zendy; Schubert M. | Zendy; Klingshirn C. | Zendy; Hetterich M. | Zendy

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Phonon properties and doping of Zn 1– x Mn x Se epilayers grown by molecular‐beam epitaxy

Author(s) -

Agarwal K. C.,

Daniel B.,

Hofmann T.,

Schubert M.,

Klingshirn C.,

Hetterich M.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200564622

Subject(s) - molecular beam epitaxy , doping , phonon , materials science , epitaxy , optoelectronics , condensed matter physics , chemistry , nanotechnology , physics , layer (electronics)

We present far‐infrared (FIR) reflection studies for Zn 1– x Mn x Se. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate‐mode behavior for the optical phonon modes in Zn 1– x Mn x Se. In addition to the known ZnSe‐like and MnSe‐like phonon resonances a weak defect‐related feature ‘D’ is found below the MnSe‐like phonon band. The frequency of this feature shows a temperature and Mn dependent red‐shift. Furthermore, the observation of a drastic reduction in the free‐electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn‐related defect complexes. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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