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Hall effect in the low charge‐carrier density ferromagnet UCo 0.5 Sb 2
Author(s) -
Tran V. H.,
Paschen S.,
Steglich F.,
Troć R.,
Bukowski Z.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200562495
Subject(s) - ferromagnetism , hall effect , condensed matter physics , magnetization , charge carrier density , charge carrier , charge (physics) , single crystal , mean free path , atmospheric temperature range , electrical resistivity and conductivity , materials science , chemistry , physics , magnetic field , nuclear magnetic resonance , thermodynamics , electron , doping , quantum mechanics
The Hall coefficient R H of ferromagnetic UCo 0.5 Sb 2 ( T C = 64.5 K) has been measured on a single crystal in the temperature range 2–300 K and in magnetic fields up to 7 T. The values of the normal R 0 and anomalous R s ) coefficients were estimated by comparing R H ( B ) with magnetisation M ( B ) data. The charge carrier concentration is found to decrease rapidly when the system undergoes a transition to the ferromagnetic ordered state. The charge mobility appears to fall down by as much as two orders of magnitude for temperatures from 20 K to 2 K. We ascribe this behaviour to an enormous decrease of the carrier collision time. The temperature dependencies of the Hall mean free path and mobility can be consistently interpreted within the 2D‐weak localization feature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)