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Spin‐dependent transport through double‐island single‐electron devices
Author(s) -
Weymann I.,
Barnaś J.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200562460
Subject(s) - quantum tunnelling , condensed matter physics , coulomb blockade , spin (aerodynamics) , magnetoresistance , non equilibrium thermodynamics , electron , fermi level , physics , coulomb , voltage , magnetic field , quantum mechanics , transistor , thermodynamics
Spin‐dependent electronic transport through a double‐island device with Coulomb blockade is considered theoretically in the sequential tunneling regime. The analysis is based on the master equation method, with the corresponding tunneling rates calculated from the Fermi golden rule. Electric current and the resulting tunnel magnetoresistance are analyzed as a function of bias and gate voltages for different collinear magnetic configurations of the device. Furthermore, the nonequilibrium spin accumulation on the islands is calculated self‐consistently from the appropriate spin balance conditions. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)