Premium
The influence of magnetic configuration on tunnelling current in double tunnel junctions with ferromagnetic electrodes
Author(s) -
Wilczyński M.,
Barnaś J.,
Świrkowicz R.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200562421
Subject(s) - quantum tunnelling , condensed matter physics , ferromagnetism , electrode , current (fluid) , biasing , electron , tunnel effect , tunnel junction , tunnel magnetoresistance , voltage , materials science , physics , quantum mechanics , thermodynamics
The influence of magnetic configuration on tunnelling current in double junctions with ferromagnetic electrodes and nonmagnetic barriers is analysed theoretically in the parabolic electron band model. The calculations are performed in the sequential tunnelling limit. A trapezoidal shape of the barriers is assumed for a biased device. Apart from this, the influence of spin‐flip processes in the central electrode is neglected. The bias voltage dependence of tunnelling current and TMR are calculated numerically. The influence of spin splitting of the electron bands in ferromagnetic electrodes on tunnelling current and TMR is also discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)