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Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
Author(s) -
Carlin J.F.,
Zellweger C.,
Dorsaz J.,
Nicolay S.,
Christmann G.,
Feltin E.,
Butté R.,
Grandjean N.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200560968
Subject(s) - materials science , optoelectronics , nitride , distributed bragg reflector , gallium nitride , fabrication , light emitting diode , wide bandgap semiconductor , nanotechnology , wavelength , layer (electronics) , medicine , alternative medicine , pathology
We propose to use lattice‐matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III‐nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state‐of‐the‐art values for III‐nitrides, and announce the future importance of AlInN in GaN‐based optoelectronics. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)