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Emission lines from excitons with collision in indirect semiconductors
Author(s) -
Kanno Shokichi,
Okushi Hideyo
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200542526
Subject(s) - exciton , semiconductor , collision , excitation , physics , emission spectrum , atomic physics , spectral line , condensed matter physics , quantum mechanics , computer security , computer science
Detailed characteristics of excitonic emission in indirect semiconductors are theoretically examined based on Bose–Einstein statistics and mathematical formulations for the excitonic emission lines are presented. In the calculation of the emission lines we take into account the collision of excitons using a conventional Lorentzian form for a spectral function. We also take into account higher order momentum dependence of the transition matrix and the excitation energy of excitons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)