Electronic properties of zinc‐blende Sc  x   Ga 1− x   N | Zendy

Fredj A. Ben | Zendy; Oussaifi Y. | Zendy; Bouarissa N. | Zendy; Said M. | Zendy

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Electronic properties of zinc‐blende Sc x Ga 1− x N

Author(s) -

Fredj A. Ben,

Oussaifi Y.,

Bouarissa N.,

Said M.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200541493

Subject(s) - pseudopotential , scandium , zinc , chemistry , electronic structure , crystallography , computational chemistry , condensed matter physics , inorganic chemistry , physics , organic chemistry

Using the empirical pseudopotential approach, we have investigated the electronic properties of GaN, ScN and their hypothetical alloys Sc x Ga 1− x N in the zinc‐blende structure. The band gaps at Γ‐, X‐ and L‐points as well as the electron effective masses of Γ and X valleys were calculated as a function of scandium molar fraction x . The agreement between our results and the available experimental and previously calculated data is fair. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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