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Electronic properties of zinc‐blende Sc x Ga 1− x N
Author(s) -
Fredj A. Ben,
Oussaifi Y.,
Bouarissa N.,
Said M.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541493
Subject(s) - pseudopotential , scandium , zinc , chemistry , electronic structure , crystallography , computational chemistry , condensed matter physics , inorganic chemistry , physics , organic chemistry
Using the empirical pseudopotential approach, we have investigated the electronic properties of GaN, ScN and their hypothetical alloys Sc x Ga 1− x N in the zinc‐blende structure. The band gaps at Γ‐, X‐ and L‐points as well as the electron effective masses of Γ and X valleys were calculated as a function of scandium molar fraction x . The agreement between our results and the available experimental and previously calculated data is fair. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)