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Surface morphology effects on the optical phonon modes in InAs x Sb 1– x epilayers on GaAs(001)
Author(s) -
Jayavel P.,
Nakamura S.,
Kesavamoorthy R.,
Srivastava G. P.,
Tomoda W.,
Koyama T.,
Hayakawa Y.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541443
Subject(s) - phonon , intensity (physics) , materials science , condensed matter physics , raman spectroscopy , raman scattering , surface roughness , atomic force microscopy , surface finish , scattering , transverse plane , morphology (biology) , optics , nanotechnology , physics , structural engineering , engineering , biology , composite material , genetics
Abstract We have studied Raman scattering from longitudinal‐ and transverse‐optical (LO and TO) phonon modes in InAs x Sb 1– x epilayers grown on GaAs(001) substrates with various arsenic compositions ( x ). InSb‐like and InAs‐like LO and TO phonon modes of the epilayers are observed. We find that the peak intensity ratio of the InAs‐like LO to TO‐mode decreases for x < 0.6 while it increases for x > 0.6. This intensity ratio change is attributed to two‐ and three‐dimensional (2D and 3D) growth mode of the epilayers using atomic force microscopy. Further, the intensity ratio depends on the root mean square surface roughness of the alloy. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)