Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb 2– x   V  x   Te 3 | Zendy

Dyck J. S. | Zendy; Ahilan K. | Zendy; Aronson M. C. | Zendy; Uher C. | Zendy; Lošťák P. | Zendy

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Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb 2– x V x Te 3

Author(s) -

Dyck J. S.,

Ahilan K.,

Aronson M. C.,

Uher C.,

Lošťák P.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200541287

Subject(s) - curie temperature , electrical resistivity and conductivity , hydrostatic pressure , ferromagnetism , condensed matter physics , context (archaeology) , magnetic semiconductor , hydrostatic equilibrium , materials science , chemistry , analytical chemistry (journal) , thermodynamics , physics , geology , paleontology , quantum mechanics , chromatography

The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb 1– x V x Te 3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ , a signature of T C , moves to lower temperature with increasing pressure. An overall suppression of T C near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier‐mediated ferromagnetic exchange interaction. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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