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Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb 2– x V x Te 3
Author(s) -
Dyck J. S.,
Ahilan K.,
Aronson M. C.,
Uher C.,
Lošťák P.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541287
Subject(s) - curie temperature , electrical resistivity and conductivity , hydrostatic pressure , ferromagnetism , condensed matter physics , context (archaeology) , magnetic semiconductor , hydrostatic equilibrium , materials science , chemistry , analytical chemistry (journal) , thermodynamics , physics , geology , paleontology , quantum mechanics , chromatography
Abstract The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb 1– x V x Te 3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ , a signature of T C , moves to lower temperature with increasing pressure. An overall suppression of T C near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier‐mediated ferromagnetic exchange interaction. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)